Abstract
The energy transitions of GaAsSbN/GaAs strained-layer single quantum wells (QWs),grown by molecular-beam epitaxy, are studied in detail, using photoluminescence (PL) andphotoreflectance (PR) spectroscopies. The optical transitions energy observed in the PLand PR spectra of GaAsSbN/GaAs QWs show a strong decrease with a small increase inthe N composition. These effects are explained through the interaction between theconduction band and a narrow resonant band formed by nitrogen states in the GaAsSbNalloy. The temperature dependence of ground-state energy of strained-layer QWs isanalyzed using the Bose–Einstein relation in the temperature range from 9 to 295 K. Theparameters that describe the temperature variations of the ground-state energies areevaluated and discussed.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
