Effects of temperature on electrical parameters in GaAs SOI FinFET and application as digital inverter

Abstract

In this paper, a GaAs SOI (Silicon on Insulator) FinFET is proposed. Si FinFET is suitable for high speed applications, but GaAs FinFETs provides better performance than Si FinFET. The impact of temperature on electron mobility, drain current, and Ion/Ioff have been reported to realize the behaviour of the device. TCAD simulation shows that as temperature raises Ion reduces, Ioff increases, and carrier mobility decreases. Also the effect of temperature on short channel effects (SCEs) has been studied. Results show that as temperature increases SS reduces, DIBL decreases, and also Vt roll off occur. An investigation on the impacts of temperature on gate capacitance (Cgg) and intrinsic delay (τ) have been presented. The value of Cgg and intrinsic delay increases as temperature increases. We implemented a CMOS inverter through proposed FinFET and the effect of temperature on its characteristic is reported. Average delay increases as temperature increases.