Abstract
Small ZnO structures including nano- and submicron-crystals have been deposited on Si and GaAs substrates by employing thermal-evaporation method. It is revealed that under the chosen growth conditions a decrease in growth temperature by locating the Si substrate away from the source crucible tends to enrich ZnO crystals with zinc element, which is in turn beneficial to the growth of nanoneedles on Si substrates. In the growth without zinc enrichment, hierarchical networks of ZnO submicron wires are observed on GaAs substrates instead of ZnO nanoflakes on Si substrates while an introduction of a low-temperature (LT) ZnO template on GaAs substrates results in a film of ZnO crystallites. Photoluminescence (PL) collected at room temperature from the ZnO crystallites film exhibits a strong near-bandedge emission at 3.275eV, which is enhanced, narrowed, and blue shifted by employing the LT-ZnO template. These changes are attributable to a suppression of As doping in ZnO caused by atoms evaporation and/or diffusion from the GaAs substrate.
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