Abstract
The effects of Ta2O5 on SnO2-based varistors were investigated. It was found that Ta2O5 significantly affects the grain size and the electrical properties. The average grain size decreases from 9.3 to 3.8 µm, the breakdown electrical field increases from 246 to 1412 V mm−1 and relative electrical permittivity decreases from 1.9 to 0.42 k with an increase in Ta2O5 concentration from 0.10 to 1.00 mol%. The sample with 1.00 mol% Ta2O5 has the best nonlinear electrical property and the highest nonlinear coefficient (α = 52.6) among all samples. The reason for grain size decrease with increasing Ta2O5 concentration is explained. To illustrate the grain–boundary barrier formation of (Co, Ta)-doped SnO2 varistors, a modified defect barrier model is introduced.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
