Abstract
Collector to base current amplification factor (α cb ) in alloy junction transistors has been studied as a function of surface recombination velocity (S) for the case where emitter is bigger than the collector. Calculations have been done for transistors with collector diameter varying from 0·005 cm to 0·07 cm and emitter to collector radius ratio ( b/ a) from 2 to 10. The ratio of normal and inverse amplification factors (α N /α I ) has been calculated as a function of ‘ S’ and has been compared with the experimental observations of Moore and Pankove [2].
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
