Abstract
A new wafer cleaning procedure has been developed for ultrathin thermal oxidation process (/spl les/50 /spl Aring/). It consists of a conventional RCA clean and a two-dip step, first in diluted HF and then in a methanol/HF solution, with no final DI water rinse. The effectiveness of this cleaning process has been compared to other commonly used cleaning methods, based on the dielectric integrity of the ultrathin thermal oxide grown. It has been found that this two-dip method produces oxides with reduced leakage current and stress-induced leakage current, which are believed to be the critical parameters for ultrathin oxide. Furthermore, this new procedure increases dielectric breakdown field, E/sub bd/ and charge-to-breakdown, Q/sub bd/ (both intrinsic and defect-related values) of ultrathin oxides. The improvement is believed to be due to enhanced silicon surface passivation by hydrogen and the reduced surface micro-roughness. >
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
