Abstract
In this reported work, high-performance fully transparent bottom-gate-type calcium-doped zinc oxide thin-film transistors (Ca–ZnO TFTs) have been successfully fabricated on glass substrate. The effects of substrate temperature during active layer deposition on the electrical properties of Ca–ZnO TFTs were investigated and an optimum condition (substrate temperature: 100°C) was achieved. The optimised thin-film transistors (TFTs) exhibit excellent electrical properties, with an off-state current (Ioff) of 1.31 × 10−12 A, an Ion/Ioff current ratio of 3.015 × 108, a saturation mobility (μsat) of 25 cm2/Vs and a threshold voltage (Vt) of 4.24 V. The variation trend of Vt, the Ion/Ioff current ratio and μsat against substrate temperatures is analysed in detail. The experimental results suggest that the performance of Ca–ZnO TFTs can be improved effectively by optimum substrate temperature.
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