Abstract
Indium tin oxide (ITO) films have been prepared by r.f. magnetron sputtering using powder target. X-ray diffraction analysis indicates that the deposited films were polycrystalline and retained a cubic bixbite structure. The ITO films deposited at low substrate temperature (T s) exhibit a (411) preferred orientation but the films deposited at high T s prefer a (111) orientation. The substrate temperature was found to significantly affect the electrical properties. As the T s was increased, the conductivity of ITO films was improved due to thermally induced crystallization. The lowest resistivity (8.7 × 10−4 Ω-cm) was obtained from ITO films deposited at 450 °C. However, optical properties of the films were somewhat deteriorated. The infrared (IR) reflectance of the film increases with increasing the substrate temperature.
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