Abstract
Highly conductive indium tin oxide (ITO) films were deposited by r.f. magnetron sputtering using ITO targets. The composition of the ITO targets was 90% indium oxide and 10% tin oxide. ITO films were deposited on 1 mm thick soda lime glass. Films deposited at substrate temperature of 300 °C, exhibited resistivities as low as 1.3 × 10 −4ohm cm −1. Annealing of the ITO films in air for 2 h was necessary for achieving low resistivities. X-ray diffraction and transmissivity tests were carried out to study the effects of annealing. Lowest resistivity and highest transmission were found to occur at an annealing temperature of 350 °C. X-ray diffraction measurements revealed that the as deposited film had a strongly (222) oriented cubic structure. Annealing relieved the as deposited tensile strain and increased crystal perfection.
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