Abstract
High-concentration, low-resistivity p-type Zn-doped InAlP alloy layers were achieved using metalorganic chemical vapor deposition (MOCVD) and off-axis substrates. The highest net acceptor concentration (N A-N D=1.3×1018 cm-3), obtained using an off-axis substrate, is one order of magnitude higher than the previously reported maximum value. Substrate misorientation was found to improve the Zn electrical activity in addition to the enhancement of Zn incorporation efficiency. Electrical resistivities as low as 0.68 Ω ·cm were obtained. High device performance was obtained for 630 nm band laser diodes (LDs) and green light emitting diodes (LEDs) fabricated with the highly Zn-doped InAlP as the p-type cladding layers.
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