Abstract
Effects of substrate misorientation on deep levels and on oxygen incorporation have been investigated in undoped In 0.5(Ga 1− x Al x ) 0.5P( x = 0.0−1.0) grown be metalorganic chemical vapor deposition (MOCVD). Deep-level transient spectroscopy (DLTS) measurements have revealed three deep levels ( E DLTS = 0.42 eV, 0.64 eV and ≈ 1.0 eV). The concentrations of the deeper two deep levels increased with increasing x, and they were drastically reduced by using (100) substrate 15° off tilted towards [011]. The residual oxygen concentration was also reduced by using the off-axis substrate. It has been shown that the above-mentioned two deep levels are related to oxygen, and have deterious effects on the luminescent properties of InGaAlP alloys.
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