Abstract
In this paper, we have studied how to reduce the torn oxide and nitride residue defects after STI-CMP process. To understand its optimum process condition, the overall STI-related processes including the trench depth, the STI-fill thickness and post-CMP thickness were discussed. As an experimental result, the STI-fill thickness gets thinner and the trench depth gets deeper, torn oxide defects and silicon damages were mainly generated after CMP process. Whereas, the trench depth gets thinner, the nitride residues were dominated. Also, as the STI-fill thickness was increased, the defect density was decreased and torn oxide occurrence rate was also reduced. The STI-fill thickness is thicker; the structure of moat oxide edge was more stable. Also, when the reverse moat pattern and trench pattern do not align each other, the torn oxide defects were easily generated. Therefore, torn oxide defect can be reduced in the well-defined reverse moat etch and trench pattern structure.
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