Abstract
The use of chemical-mechanical polishing (CMP) as a global planarization in ULSI process technology is increasing rapidly. In particular, to achieve the higher density and greater performance, the shallow trench isolation (STI)-CMP process has been attracting attention for multilevel interconnection as an essential isolation technology. Also, it was possible to apply the direct STI-CMP process without the reverse moat etch step using high selectivity slurry (HSS). In this work, we determined the process margin with optimized process conditions to apply the HSS STI-CMP process. Then, we evaluated the reliability and reproducibility of the STI-CMP process through the optimal process conditions. The wafer-to-wafer thickness variation and day-by-day reproducibility of the STI-CMP process after repeatable tests were investigated. Our experimental results shows quite acceptable and reproducible CMP results with a wafer-to-wafer thickness variation within 400 Å.
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