Abstract
We studied effects of sputtering pressure on growth of (ZnO)x(InN)1-x crystal films deposited at 450°C by rf magnetron sputtering. Epitaxial growth of (ZnO)x(InN)1-x films was realized on single-crystalline ZnO template. X-ray diffraction measurements show that full width at half maximum of the rocking curves from the (101) plane of the films reaches minimum value of 0.11º at 0.5 Pa. The sputtering gas pressure is a key tuning knob for controlling the crystal quality of ZION films.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
