Abstract
Dielectric, ferroelectric, and piezoelectric properties of 0.36(Bi 1 -x Sm x )ScO 3 -0.64PbTiO 3 (BSPT -x Sm) ceramics were investigated to assess effects of Sm-substitution on 0.36BiScO 3 -0.64PbTiO 3 for high temperature piezoelectric device application. Optimal sintering was achieved at 1200°C when the BSPT -x Sm ceramics were fully densified and crystallized with a perovskite structure without any secondary phase. The substitution of Bi 3+ with Sm resulted in degradation of rhombohedral side in BSPT -x Sm ceramics having morphotropic phase boundary. In addition, variations of grain size and ferroelectric behavior after Sm-substitution were insignificant. However, dielectric constant ( ε T 33 / ε 0 ) was significantly enhanced with an increasing of amount of Sm to 5%. Although a slight decrease of relative density in case of x exceeding 3% led to deterioration of piezoelectric values of d 33 , k p , and d 33 *, the BSPT-3%Sm ceramic exhibited excellent values of d 33 of 628 pC/N, k p of 62.4%, and d 33 * of 718 pm/V at 4.5 kV/mm, along with a high ferroelectric transition temperature of 421°C. The highly increased diffusion coefficient of 1.909 also implies that the Sm-substitution contributed to relaxor-like ferroelectric behavior of BSPT ceramics.
Published Version
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