Effects of size and shape on electronic states of quantum dots

Abstract

A strained-modified, single-band, constant-potential three-dimensional model was applied to study the dependence of electronic states of InAs/GaAs quantum dots (QDs) of different shapes and sizes. The energy trends decrease monotonously with increasing QD size (i.e. E~size-gamma) but exhibit an optimum value under aspect ratio variation. The energy dependency gamma for volume is significantly different from that for base length and height. The ground state energy for broad tip is always lower than that of narrow tip. This study allows for effective QD bandgap engineering so as to fulfil specific requirements of different QD devices