Abstract
We report the growth and structural and optoelectronic properties of films of hydrogenated amorphous silicon (a‐Si:H) and microcrystalline silicon (μc‐Si:H). The films were grown by combining very high frequency (80 MHz) excitation of the glow discharge with the addition of dichlorosilane to the source gas of silane and hydrogen . While the transition from a‐Si:H to μc‐Si:H is achieved by dilution, the film properties are affected by the addition of . Adding raises the H content of μc‐Si:H and reduces the electrical conductivity (at 300 K) by 2–6 orders of magnitude, in comparison to μc‐Si:H deposited from and alone. A most important result is the growth of thin‐film transistor quality μc‐Si:H at the relatively low substrate temperature of 230°C. © 2000 The Electrochemical Society. All rights reserved.
Published Version
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