Abstract
The effects of the stoichiometry of the Si-rich oxide (SRO) layer,O/Si ratio, on the structural and optical properties ofSRO/SiO2 multilayer films were investigated in this work.SRO/SiO2 multilayer filmswith different O/Si ratios were grown by a co-sputtering technique, and Si quantum dots (QDs) were formed withpost-deposition annealing. By transmission electron microscopy (TEM) and glancing incidencex-ray diffraction (GIXRD), it was found that the Si QD size decreases with increases inO/Si ratio. The photoluminescence (PL) spectrum varies with theO/Si ratio in band position, shape and intensity. In addition, it wasobserved that the absorption edge blue-shifts with increases in theO/Si ratio. The change in the absorption edge is consistent with strengthening quantumconfinement effects in Si QDs, as indicated by TEM and GIXRD. The optical propertieswere also investigated by 2D photoluminescence excitation (2D-PLE) and lifetimemeasurements. The origin of emission and absorption is discussed based on the absorption,PL, 2D-PLE and decay time measurements.
Published Version
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