Abstract
The thermoelectric properties of Se-doped compounds Zn 4(Sb 1− x Se x ) 3 ( x = 0, 0.005, 0.01, 0.015) have been studied. The results indicate that low-temperature ( T < 300 K) thermal conductivity of moderately doped Zn 4(Sb 0.99Se 0.01) 3 reduce remarkably as compared with that of Zn 4Sb 3 due to enhanced impurity (dopant) scattering of phonons. Electrical resistivity and Seebeck coefficient are found to increase and then decrease moderately with the increase in the Se content. Moreover, the lightly doped compound Zn 4(Sb 0.99Se 0.01) 3 exhibits the best thermoelectric performance due to the improvement in both its thermal conductivity and Seebeck coefficient. Its figure of merit, ZT, is about 1.3 times larger than that of pure Zn 4Sb 3 at 300 K.
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