Abstract
To determine the energy levels of intrinsic defects in high-purity semi-insulating 4H-SiC, we apply discharge current transient spectroscopy (DCTS) that is a graphical peak analysis method based on the transient reverse current of a Schottky barrier diode, because transient capacitance methods such as deep level transient spectroscopy and isothermal capacitance transient spectroscopy are feasible only in low-resistivity semiconductors. The reverse current consists the reverse current through the balk and the surface leakage current of the diode. It is elucidated that the sacrifice oxidation could dramatically reduce the surface currents of diodes in the case of high-purity semi-insulating 4H-SiC, suggesting that the densities and emission rates of traps in the bulk of the SiC can be determined from the transient reverse current.
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