Abstract
Published experimental results have shown that the base current and hence the current gain of passivated AlGaAs/GaAs heterojunction bipolar transistors is dominated by recombination in the base-emitter space charge region. Because the lifetime of AlGaAs is shorter than GaAs, a theoretical analysis and experimental investigation were carried out to assess the merit of replacing a portion of the graded AlGaAs base-emitter junction. This replacement potentially reduces the space charge recombination current. Experimental results are obtained for transistors with various replacement thicknesses. The theoretical calculations agrees well with the measured data, from which the lifetime in AlGaAs is estimated.
Published Version
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