Effects of reactor pressure on GaN-based light-emitting diodes grown on a-plane sapphire substrates

Abstract

GaN and light-emitting diodes (LEDs) with InGaN/GaN multiple quantum wells (MQWs) were grown on a-plane sapphires under different reactor pressures by metalorganic chemical vapor deposition (MOCVD). X-ray diffraction (XRD) and atomic force microscopy (AFM) measures were performed to characterize the epitaxial films. Reverse bias current–voltage ( I– V) characteristics and electroluminescence (EL) intensities of LEDs were measured. GaN film grown under higher reactor pressure showed better quality, and LED on it showed improved performance.