Abstract
K0.5Bi4.5Ti4O15 (KBTi), K0.5Bi4Gd0.5Ti4O15 (KBGdTi), and K0.5Bi4Dy0.5Ti4O15 (KBDyTi) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method to investigate the effects of doping on the structural, electrical, and ferroelectric properties. Doping with Gd- and Dy-ions clearly leads to notable improvements in the electrical and ferroelectric properties. Among the thin films, the KBGdTi thin film exhibited a low leakage current density of 1.83×10–9A/cm2 at 100kV/cm, a large ferroelectric polarization of 49μC/cm2, and a low coercive electric field of 398kV/cm at an applied electric field of 885kV/cm. A fatigue endurance study showed that the switchable polarization was reduced by only 4% of the initial value after 1.44×1010 switching cycles for the Gd- and Dy-doped KBTi thin films. The improvements in electrical and ferroelectric properties of the Gd- and Dy-doped KBTi thin films were explained on the basis of microstructural change, a decrease in the number of oxygen vacancies, and structural distortion caused by doping with Gd- and Dy-ions.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
