Abstract
In this paper, effects of rapid thermal oxidation (RTO) on electrical characteristics of thin (200 Å) chemical-vapor-deposited (CVD) SiO2 have been studied. Current density-electric field (J-E) characteristics, flat-band voltage, and gate voltage shifts under constant-current stressing were also examined. Results show that RTO improves the charge trapping property of as-deposited CVD oxides. In addition, RTO of CVD oxides also increases the electron injection barrier height of the as-deposited samples at the cathode and produces devices with lower leakage current and tighter breakdown distribution.
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