Abstract
The authors report on the effect of rapid thermal annealing (RTA) on the performance of InAsP/InP strained multiquantum well (SMQW) laser diodes (LDs) grown by metal organic chemical vapour deposition. From the photoluminescence (PL) measurements, the optimal RTA temperature for the InAsP/InP strained single quantum well (SSQW) stack was found to be 700°C. The 700°C annealed SSQW stack was found to have a stronger PL peak intensity, no halfwidth broadening and small peak shift, indicating that the degree of interdiffusion of group-V elements can be much reduced. The threshold current and slope efficiency of the 700°C RTA SMQW LDs can be reduced significantly as compared to those of as-grown LDs.
Published Version
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