Abstract
Cd2SnO4/CdS/CdTe/CuxTe/Au structure solar cells were made in samples of 20 × 20 mm2. Multiple metallic back-contacts were deposited on each sample by thermal evaporation. A series of rapid thermal annealing treatments (RTA) were performed on the cells, controlling work pressure (Pw) and temperature (Ta), to activate the interface of CdTe-back contact. Several combinations of pressure (746 mbar ≤ Pw ≤ 1112 mbar) and temperature (180 °C ≤ Ta ≤ 260 °C) were studied. The best results were obtained for the lowest Pw, increasing the average efficiency from 6.9% to 9.8% as Ta increased. All photovoltaic parameters (VOC, JSC, FF, RS, and RSh) were enhanced with the RTA treatments along with the dispersion values. Once the thermal activation's optimal conditions were determined, the highest efficiency was 11.3% with an RTA single treatment. The improvement is attributed to the formation of Cu1·85Te phase. It is shown that this kind of thermal treatment on CuxTe/Au back-contact of the cells can be employed to obtain higher area solar cells.
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