Abstract
Using the tight-binding model and the generalised Green’s function formalism, the effect of quantum interference on the electron transport through the benzene molecule in a semiconductor/benzene/semiconductor junction is numerically investigated. We show how the quantum interference sources, different contact positions and local gate can control the transmission characteristics of the electrode/molecule/electrode junction. We also study the occurrence of antiresonant states in the transmission probability function using a simple graphical scheme for different geometries of the contacts between the benzene molecule and semiconductor (silicon and titanium dioxide) electrodes.
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