Abstract
In CZ-Si crystal, the position of interstitial-vacancy (i-v) boundary is mainly controlled by the factors of crystal pulling rate and temperature gradient. However, the fluctuations of both high and low frequencies in pulling rate did not vary the i-v boundary position severely. The reason for this was found to be the time-delayed phenomena in crystal growth process. The radial variation of i-v boundary based on the V/G was derived from the modeling of the time-delayed growth characteristics.
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