Abstract
The electron cyclotron resonance plasma-assisted metal organic chemical vapor deposition (ECR MOCVD) method was used to prepare TiO 2 thin films. A TiO 2 thin film consisting of an anatase phase was fabricated on Si and SiO 2 (2000 Å)/Si substrates at relatively low temperature. Phase, surface morphology and deposition rate were investigated using X-ray diffraction, scanning electron microscopy and ellipsometry. The effects of process parameters such as deposition temperature (25–550°C), plasma power (0–400 W), the spacing between gas ring and substrate (110–170 mm) and working pressure (1.5–5 mTorr) on TiO 2 thin film formation in an ECR MOCVD system have been investigated.
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