Abstract
Abstract The pressure (0–6kbar), DC-bias field(0–11kV/cm) and frequency(300Hz–100kHz) dependence of dielectric properties of PIN ceramics prepared by different thermal processing techniques (conventional method:sample A and fast firing;sample B) were reported. PIN sample A reveals coexistence of a ferroelectric relaxor (disordered state) and an antiferroelectric phase(ordered one), while sample B reveals a ferroelectric relaxor. For sample A, the permittivity maximum(erm′ =1800 at 1kHz) temperature Tm decreases with pressure(dTm/dp=−2°C/kbar) and antiferroelectric transition temperature Tt increases with p(dTt/dp=5°C/kbar). For sample B(with e rm′ = 3500 at 1kHz), the Tm decreases with dTm/dp=−3°C/kbar, and a remarkable decrease in e rm′ with DC-bias field and a strong dielectric relaxation of polydispersive type which obeys the Cole-Cole arc law were observed.
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