Abstract
The effects of postmetallization oxygen annealing on the electrical properties of a thick amorphous (BSmT) thin film have been investigated. The radio frequency sputtered BSmT film was well-developed on a substrate. A BSmT film that was postmetallization-annealed at oxygen pressure exhibited a high capacitance density of at . It still showed a high capacitance density of and a high Q value of 67, even at , along with a relatively high of 30. Its leakage current density was significantly improved to at , and the conduction mechanism is considered to be a Poole–Frenkel mechanism. In addition, better quadratic voltage and temperature coefficients of capacitance were obtained, which were as low as approximately and , respectively, at . Therefore, it is thought that the oxygen during the annealing process significantly improves the electrical properties of the BSmT films for high-performance metal–insulator–metal capacitors.
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