Abstract
The effects of postetching treatment (PET) using carbon-containing gas on molecular-pore-stacking (MPS)/Cu interconnects were investigated. By using this technology, a 5% reduction in wiring capacitance was obtained as a result of the hardening of exposed MPS at the trench bottom. Via-chain yield improvement was also confirmed as a result of eliminating of etching residues in via-holes. These results indicate that high production yield and reliability can be obtained by PET for 28-nm-node complementary metal oxide semiconductor (CMOS) devices and beyond.
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