Abstract
The reduction of the oxidation temperature is effective for atomically-controlled gate oxide growth. We focus the effects of post-oxidation annealing on oxides grown at a low temperature from 650 to 850°C. The N 2 annealing drastically decreased the leakage current at the low gate voltage below 1.5 V. The interface trap density was also reduced by the N 2 annealing. We confirmed the correlation between the interface trap density and the leakage current at a low voltage below 1.5 V. We also found that the stressing immunity of the ultrathin oxides grown at a low temperature, 650°C, is dramatically improved by post-oxidation annealing at 850°C.
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