Abstract
Sr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.6</sub> Ba <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.4</sub> Nb <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> (SBN) thin films were deposited using radio frequency (RF) magnetron sputtering method and post annealing in a conventional furnace. The annealing process had improved the crystallization and also had large influences on the crystalline orientation. As the annealing temperature increased from 600°C to 700°C, the diffraction intensities of (410) and (001) planes increased. Annealed at 800°C, the SBN thin films showed highly c-axis crystalline orientation of (001) plane. The influences of annealing temperatures on the electrical characteristics of the polarization-applied electric field curves, the capacitance-voltage curves, and the leakage current density-electric field curves were investigated.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
