Abstract
A complete performance and reliability study on effects of different plasma treatments (NH/sub 3/ and N/sub 2/O), substrate types (oxidized silicon wafer and quartz), and crystallization methods (excimer laser annealing and solid phase crystallization) of low temperature polysilicon (LTPS, <600/spl deg/C) TFTs are reported. It is shown that devices made by different fabrication methods exhibit different degradation behaviors under various stressing conditions.
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