Abstract
The ongoing transition to lower dimension devices requires the replacement of SiO2 by a lower-k dielectric insulator. Such materials are porous, introducing the need for sealing against penetration of gaseous and/or liquid species during subsequent processing. In this work, we investigate the effect of different plasma treatments on a porous low-k polymer film. Ion bombardment induces the formation of a dense surface layer capable of sealing the polymer. A competing etching reaction by the plasma gases determines the extent of the densified layer. Structural and chemical changes induced by the plasma treatments can extend into the bulk of the film and irreversibly change its properties. Exposing the plasma treated films to chemical precursors during an atomic layer deposition process is used to test sealing. The sealing behavior is discussed in view of the reactivity of the plasma and the post sealing temperature treatment.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.