Effects of PECVD temperature and RF power on surface structure and refractive index of amorphous and polycrystalline silicon films

Abstract

The amorphous and polycrystalline silicon films were obtained by plasma enhanced chemical vapor deposition. The effect of power and temperature over a wide range on the surface morphology and structure, deposition rate films and refractive index have been investigated by atomic force microscopy, profilometry and ellipsometry. The deposition rate increased from 19.1 to 58.2 nm/min with RF power from 10 to 40 W. The refractive index of the films obtained at a temperature of 550 to 700 °C was in the range from 3.5 to 5.5.