Abstract
We investigated the effects of Pb content and electrode materials on the ferroelectric properties of metal/Pb(Zr0.52Ti0.48)O3/metal thin film capacitors for non-volatile memory device applications. The increase of Pb content resulted in a change from the non-ferroelectric pyrochlore phase to the ferroelectric perovskite phase, and consequently, the enhancement of polarization-voltage hysteresis loops. Non-noble metal/PZT/noble metal asymmetric electrode structures were fabricated by using non-noble metals and a noble metal with different work functions. The asymmetric electrode and the resultant internal field, not only made a shift in the initial hysteresis loops, but also caused continuous degradation of the reliability characteristics of ferroelectric capacitors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
