Abstract
The YMnO₃ thin films were prepared on platinized-silicon substrates by chemical solution deposition and annealed at 750 to 850℃ for 1 h under various oxygen pressures, from 2 mTorr to 760 Torr. Effects of annealing oxygen pressures on the crystallization behavior and electrical properties of YMnO₃ thin films were investigated. Crystallinity and c-axis preferred orientation of YMnO₃ thin film were improved by decreasing the oxygen pressure but were deteriorated at extremely low oxygen pressure, 2 mTorr. Leakage current density of the YMnO₃ thin film decreased as the oxygen pressure decreased. The film annealed at 800 o C under 2 Torr, which had the best crystallinity and the highest c-axis preferred orientation, showed the best-developed ferroelectric C-V hysteresis.
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