Abstract
The rate of oxidation of silicon carbide was studied at different partial pressures of oxygen. The diffusion rate constant was found to vary with the logarithm of the partial pressure of oxygen according to the theory of oxidation of thin films as proposed by Engell and Hauffe. An alternative explanation based on the change of free energy with surface coverage was also found to fit the data.
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Schedule a callMore From: Journal of the American Ceramic Society. American Ceramic Society
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