Abstract
Resistivity components parallel and perpendicular to the CuO 2 plane have been measured in Bi 2Sr 2CaCu 2O 8+ x single crystals. The oxygen content x is systematically varied by annealing with oxygen at pressures over the range 10 -5< p<1 bar with temperature fixed at 400°C. A variation of the critical temperature is observed as a function of oxygen annealing pressure p, consistent with the result on polycrystals. With increasing p, the magnitude of the in-plane resistivity ϱ ab diminishes, keeping an almost linear temperature dependence. In contrast, the semiconductor-like temperature dependence of the out-of-plane resistivity ϱ c is significantly affected by oxygen intercalation. The functional form of the ϱ c - T curve supports the tunneling process for the out-of-plane conduction mechanism.
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