Abstract
We have studied the effects of oxygen addition in the CCl4 reactive ion etching of hydrogenated amorphous silicon carbide (a-SiC:H) films. The effects of oxygen on the etching profile of a-SiC:H films, the etch rates of a-SiC:H and oxide, and the etching selectivity of a-SiC:H/oxide are examined. It is observed that the addition of oxygen into CCl4 plasma greatly increases the etch rate of a-SiC:H and the etching selectivity of a-SiC:H/oxide, while gradually changes the etching process from being anisotropic to isotropic. Experimental data are interpreted with the examining of the plasma phase chemistry and ion bombardment energy. An etch mechanism is proposed for explaining the observed effects.
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