Effects of oxidation and nitrogen annealing on ion-implantation-induced interface states in the silicon–silicon dioxide system

Abstract

Experiments designed to determine the effects of oxidation and nitrogen annealing on interface states created by argon implantation through thermally grown silicon dioxide films are described. Although these states could be inactivated by a 900 °C hydrogen anneal, they reappeared after short nitrogen or oxygen treatments at 1000 °C. Only oxidations which consumed at least 500 Å of the implantation-damaged silicon surface completely eliminated the states. The oxidation rate of the implanted structures was found to be increased relative to that of the unimplanted controls.