Effects of n-type 4H-SiC epitaxial wafer quality on reliability of thermal oxides

Abstract

The reliability of thermal oxides was investigated on n-type 4H-SiC(0001) epitaxial wafers with different metal impurity concentrations and surface roughness. Time-zero dielectric breakdown measurements showed that almost all of the thermal oxides ruptured at a field-to-breakdown (EBD) of 10MV∕cm, and that the maximum EBD was 11MV∕cm, despite the influence of the epitaxial wafer. On the other hand, time-dependent dielectric breakdown measurements indicated that the charge-to-breakdown (QBD) of the thermal oxides was influenced by the epitaxial wafer. This suggests that two types of oxide breakdown regimes exist under a high-stress field: one resulting from wafer influences, and the other intrinsic.