Abstract
We present theoretical studies of the effects of nonlinear elasticity and electromechanical coupling on the pressure coefficients of the light emission, dEE/dPext, in GaN/AlN and In0.2Ga0.8N/GaN superlattices with compressively strained quantum wells. We show that effect of the nonlinear elasticity, manifesting itself in pressure dependence of elastic constants, leads to significant reduction of the values of dEE/dPext in the considered structures. On the other hand, the effect of the electromechanical coupling, i.e., co-existence of the direct and converse piezoelectric effect, causes increase of the dEE/dPext in these structures. However, the contribution to dEE/dPext, originating from the nonlinear elasticity dominates over the contribution coming from the effect of electromechanical coupling. Interestingly, the influence of the effect of electromechanical coupling on dEE/dPext diminishes when the nonlinear elasticity is taken into account.
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