Abstract
We study the effect of ion irradiation during the growth of boron nitride (BN) and amorphous carbon (a-C) by sputter deposition. We found that the dominant effects for the BN growth are the subplantation of N + and B + species. For energies higher than the threshold for Ar + subplantation, the Ar + penetrates into BN and disrupts the BN bonds resulting in defective BN. The existence of Ar impurities in such films promotes the stability of C impurities. These effects result in a very narrow window of ion energy (<40 eV width) where successful growth of BN films may be achieved. On the other hand, in a-C films, sp 3-bonded C, we found a close correlation between the Ar impurities with the sp 3-content, which suggests that Ar impurities promote the formation of sp 3-bonded carbon in a-C, in contrast to BN growth.
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