Abstract
In this paper, we study the effects of non-uniform channel doping on junctionless transistor (JLT) using 3D quantum simulations. The JLT devices require a uniformly doped ultrathin channel. Although we take uniform doping for study, in practice, it will be technologically difficult to obtain. For technological reason, after thermal annealing, the impurity profile in semiconductor device becomes uniform along lateral channel direction and non-uniform along vertical direction. Here, we show that this directly affects the short channel behaviour and reduces on-current.
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