Design and Investigation of PGP SELBOX FinFET with Uniform and Non-uniform Doping Profile at Sub-7 nm Technology Node

Abstract

AbstractThis paper proposes the uniformly and non-uniformly doped SELBOX FinFET with partial ground plane (PGP). Performance evaluation of SELBOX transistor (uniformly doped) without PGP is compared with uniformly doped SELBOX transistor with PGP, and then, performance characteristics of non-uniformly doped SELBOX transistor with PGP are studied and compared with the technique without the use of PGP. The proposed SELBOX FinFET with PGP shows improved short-channel behavior than SELBOX FinFET without PGP for uniform and non-uniform doping profile both. Proposed device presents ION/IOFF ratio improvement of 6% over the recently proposed 3D SELBOX FinFET without PGP technique for both uniformly and non-uniformly doped channel. In the proposed devices, improvements in DIBL and SS of 5.47 and 36.66% are achieved compared to without the use of PGP technique for uniformly doped channel only. For non-uniformly doped channel, improvement of 17.87 and 19.33% is observed in DIBL and SS values in the proposed structure compared to without the use of PGP technique. Silvaco Atlas 3D tool is used for accurate and reliable results.KeywordsJunctionless transistorSELBOX (selective buried oxide)FinFETPGP (partial ground plane)