Abstract
Amorphous carbon (a-C) and carbon nitride (CNx) thin films were irradiated with a nitrogen ion beam (N+/N2+) at different ion energies between 0.5–10 keV. The CNx film showed high sputter erosion and a decrease in nitrogen concentration by ion bombardment. In a-C film, nitrogen accumulation inside it due to nitrogen ion implantation was clearly observed. X-ray photoelectron spectroscopy (XPS) depth profiles revealed that the ion implantation ranges of nitrogen in the a-C films were consistent with TRIM calculation. The existence of C-N covalent bonds was confirmed by XPS studies of the ion-implanted a-C film.
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