Effects of nitrogen incorporation in InSb1−xNx grown using radio frequency plasma-assisted molecular beam epitaxy

Abstract

In Sb 1 − x N x was grown by radio frequency plasma-assisted molecular beam epitaxy. The effect of nitrogen plasma power (200–500W) and growth temperature (330–420°C) on nitrogen incorporation was investigated. A combined analysis involving x-ray diffraction, x-ray photoelectron spectroscopy, and secondary ion mass spectroscopy measurements indicates that the dominant nitrogen defect is interstitial N–Sb. Increasing the plasma power resulted in increase in the interstitial N–Sb amount rather than the substitutional NSb amount. For fixed plasma power, decreasing the growth temperature helped reduce the interstitial N–Sb defect. Under the experimental conditions, the average value of substitutional N is approximately 1.6%–2%.